- The participation guide is available here.
- Oral sessions will be held at the Room A on the second floor of the Kyoto International Conference Center.

Oct. 31(Tue) Nov. 1(Wed) Nov. 2(Thu)
8:10 Registration
8:50 Opening
9:00 Session 1 :
9:00 Session 4:
Qubit operations
9:00 Session 6:
Large scale characterization
9:20 9:20 9:20
9:40 9:40 9:40
10:00 10:00 10:00
10:20 10:20 10:20
10:40 Coffee 10:40 Coffee 10:40 Coffee
11:10 Session 2:
11:10 Session 5:
11:10 Session 7:
New directions
11:30 11:30 11:30
11:50 11:50 11:50
12:10 12:10 12:10
12:30 12:30 Lunch 12:30 Lunch
12:50 Lunch 14:00 Poster 14:00 Session 8:
Device structure
14:20 Session 3:
16:00 Exploration time 14:20
14:40 19:00 Dinner 14:40
15:00 15:00
15:20 15:20 Coffee
15:40 15:50 Session 9:
Spin-photon coupling
16:00 Poster 16:10
18:00 Dinner 16:30
17:30 Closing


Session 1: Holes

Optimal operation of a hole-spin qubit: from sweet spots to sweet lines

Marion Bassi1
1Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France.

A singlet-triplet hole-spin qubit in planar silicon

Scott Liles1
1University of New South Wales

Electrical operation of planar hole qubits: Silicon vs. Germanium

Abhikbrata Sarkar1
1School of Physics, University of New South Wales, Sydney 2052, Australia

Manipulation of hole spins under realistic electric and strain fields in quantum dots

Jose Carlos Abadillo-Uriel1
1Instituto de Ciencia de Materiales de Madrid, CSIC

Ge/Si Nanowire Hole Spin Qubits: Fast and Coherent

Miguel José Carballido1
1Department of Physics, University of Basel, Switzerland

Session 2: Readout

Ultra-dispersive resonator readout of a quantum dot qubit using longitudinal coupling

Benjamin Harpt1
1University of Wisconsin-Madison

In situ amplification of spin echoes within a kinetic inductance parametric amplifier

Anders Kringhøj1
1University of New South Wales

Readout of spins in the absence of Pauli-spin blockade

Felix von Horstig1,2
1Quantum Motion, 2Department for Materials Sciences and Metallurgy, University of Cambridge

Dispersive readout of an isolated 2x2 quantum dot array in silicon

Matias Urdampilleta1
1Institut Néel, CNRS Grenoble, France

Rapid single-shot parity spin readout with fidelity exceeding 99 %

Kenta Takeda1

Session 3: Dopants

Polarization dynamics of donor bound excitons in n-type 28Si

David Alexander Vogl1,2
1Walter Schottky Institute, 2Technical University of Munich

Engineering local symmetry and spin-orbit interactions in silicon qubits at the atomic scale

Yu-Ling Hsueh1,2
1University of New South Wales, 2Silicon Quantum Computing Pty. Ltd

Characterization of single 209-Bi donors in Si nanoelectronic devices

Mario Simoni1,2
1University of Twente, 2Politecnico di Torino

Atomistic tight-binding Hartree-Fock electronic structure formalism for dopant arrays in silicon

Maicol A Ochoa1,2
1National Institute of Standards and Technology, Gaithersburg, MD, 20889, USA, 2Department of Chemistry, University of Maryland, College Park, MD, 20742, USA

Encoding Quantum Information in a high-spin nucleus in silicon

Benjamin Wilhelm1
1UNSW Sydney

Session 4: Qubit operations

High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin

Jonathan Yue Huang1
1School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, NSW 2052, Australia

Extending Performance of Si/SiGe Exchange-Only Spin Qubits in the SLEDGE Architecture

Andrew Pan1
1HRL Laboratories

Identifying the decoherence source of silicon spin qubits based on noise cross-correlation

Jun Yoneda1
1Tokyo Institute of Technology

Spatial Dependence of Noise Correlations in a 1D Silicon Spin Qubit Array

Matthew Donnelly1,2
1Silicon Quantum Computing Pty. Ltd., 2University of New South Wales

Initial qubit operation runs performed in linear 5-qubit devices in 28Si/SiGe

Dohun Kim1
1Seoul National University

Session 5: Shuttling

Coherent spin qubit shuttling through germanium quantum dots

Floor van Riggelen-Doelman1
1QuTech and Kavli Institute of Nanoscience, Delft University of Technology

Valley splitting and spin shuttling in Si/SiGe heterostructures

Merritt Losert1
1University of Wisconsin-Madison

Bucket brigade and conveyor-mode coherent electron spin shuttling in Si/SiGe quantum dots

Maxim De Smet1
1QuTech, TU Delft

Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe

Lars R Schreiber,21
1JARA-FIT IQI, RWTH Aachen and FZ Jülich, 2ARQUE Systems GmbH

Session 6: Large scale characterization

Tunnel Falls: Intel’s Latest Silicon Spin Qubit Test Chip

Hubert George1

Rapid cryogenic characterisation of 1024 integrated silicon quantum dots

Virginia Natalia Ciriano-Tejel1
1Quantum Motion

Si spin Qubit fabrication in advanced 300 mm semiconductor manufacturing facilities: the good, the bad, and the ugly

Kristiaan De Greve1,2
1IMEC, 2KU Leuven

Wafer-level characterization of industrial grade Si-based qubit devices

Emmanuel Chanrion1

QARPET: A quantum prober of spin-qubit performance at scale

Alberto Tosato1

Session 7: New directions

Optomechanical readout for donor spins in silicon via strain coupling

Arvind Shankar Kumar1
1University of Jyväskylä

Entanglement by measurement of spin qubits via longitudinal couplings to a superconducting resonator

Rusko Ruskov (Hristov)1
1Laboratory for Physical Sciences

Qubits on the move: fast, high-fidelity, baseband quantum gates

Chien-An Wang1
1Qutech and Kavli Institute of Nanoscience

Dynamic-ADAPT-QAOA and Layered-ADAPT-VQE: Two algorithms for demonstration in silicon

Normann Mertig1
1Hitachi Cambridge Laboratory, Hitachi Europe Ltd.

Session 8: Device structure

Progress toward developing a Sn-Qubit Platform

Dwight Luhman1
1Sandia National Laboratories

Coupling of a resonator exchange qubit on a Si/SiGe triple quantum dot and a high impedance resonator

Shunli Jiang1
1University of Science and Technology of China

Ab-initio study of valley-orbit states in Si/SiGe and Si/SiO2

Lukas Cvitkovich1,2
1Institute of Microelectronics, Vienna Univ. of Technology, Gusshausstrasse 27-29, 1040 Wien, 2Univ. Grenoble Alpes, CEA, IRIG-MEM-L Sim, 17 Av. des Martyrs, F-38000 Grenoble, France

Theory of spin qubits in silicon Fin field-effect transistors: Prospects for holes and electrons

Stefano Bosco1
1Univ. of Basel

Session 9: Spin-photon coupling

Two-qubit logic between distant spins in silicon

Xiao Xue1
1QuTech, Delft University of Technology

Long electron spin and optical coherence of Er in Si

Alexey Lyasota1
1Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia

Silicon T centre hyperfine structure and memory-qubit protection scheme

Nicholas Alan Brunelle1,2
1Simon Fraser University, Canada, 2Photonic Inc., Canada

A silicon hole spin flopping-mode qubit in a cQED architecture

Simon Zihlmann1
1Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France

A photonic which-path entangler based on longitudinal cavity-qubit coupling

Zoé McIntyre1
1McGill University

Presentation instructions

Oral presentations: 15-minute talk + 5-minute question.
Poster presentations: A0 size or smaller.
There will be no invited speakers.