Program
Timetable
- The participation guide is available here.
- Oral sessions will be held at the Room A on the second floor of the Kyoto International Conference
Center.
Talks
Session 1: Holes
Optimal operation of a hole-spin qubit: from sweet spots to sweet lines
Marion Bassi1
1Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble,
France.
A singlet-triplet hole-spin qubit in planar silicon
Scott Liles1
1University of New South Wales
Electrical operation of planar hole qubits: Silicon vs. Germanium
Abhikbrata Sarkar1
1School of Physics, University of New South Wales, Sydney 2052,
Australia
Manipulation of hole spins under realistic electric and strain fields in quantum dots
Jose Carlos Abadillo-Uriel1
1Instituto de Ciencia de Materiales de Madrid, CSIC
Ge/Si Nanowire Hole Spin Qubits: Fast and Coherent
Miguel José Carballido1
1Department of Physics, University of Basel, Switzerland
Session 2: Readout
Ultra-dispersive resonator readout of a quantum dot qubit using longitudinal coupling
Benjamin Harpt1
1University of Wisconsin-Madison
In situ amplification of spin echoes within a kinetic inductance parametric amplifier
Anders Kringhøj1
1University of New South Wales
Readout of spins in the absence of Pauli-spin blockade
Felix von Horstig1,2
1Quantum Motion, 2Department for Materials Sciences and
Metallurgy, University of Cambridge
Dispersive readout of an isolated 2x2 quantum dot array in silicon
Matias Urdampilleta1
1Institut Néel, CNRS Grenoble, France
Rapid single-shot parity spin readout with fidelity exceeding 99 %
Kenta Takeda1
1Riken
Session 3: Dopants
Polarization dynamics of donor bound excitons in n-type 28Si
David Alexander Vogl1,2
1Walter Schottky Institute, 2Technical University of
Munich
Engineering local symmetry and spin-orbit interactions in silicon qubits at the atomic scale
Yu-Ling Hsueh1,2
1University of New South Wales, 2Silicon Quantum Computing Pty.
Ltd
Characterization of single 209-Bi donors in Si nanoelectronic devices
Mario Simoni1,2
1University of Twente, 2Politecnico di Torino
Atomistic tight-binding Hartree-Fock electronic structure formalism for dopant arrays in silicon
Maicol A Ochoa1,2
1National Institute of Standards and Technology, Gaithersburg, MD, 20889,
USA, 2Department of Chemistry, University of Maryland, College Park, MD,
20742, USA
Encoding Quantum Information in a high-spin nucleus in silicon
Benjamin Wilhelm1
1UNSW Sydney
Session 4: Qubit operations
High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin
Jonathan Yue Huang1
1School of Electrical Engineering and Telecommunications, The University of
New South Wales, Sydney, NSW 2052, Australia
Extending Performance of Si/SiGe Exchange-Only Spin Qubits in the SLEDGE Architecture
Andrew Pan1
1HRL Laboratories
Identifying the decoherence source of silicon spin qubits based on noise cross-correlation
Jun Yoneda1
1Tokyo Institute of Technology
Spatial Dependence of Noise Correlations in a 1D Silicon Spin Qubit Array
Matthew Donnelly1,2
1Silicon Quantum Computing Pty. Ltd., 2University of New South
Wales
Initial qubit operation runs performed in linear 5-qubit devices in 28Si/SiGe
Dohun Kim1
1Seoul National University
Session 5: Shuttling
Coherent spin qubit shuttling through germanium quantum dots
Floor van Riggelen-Doelman1
1QuTech and Kavli Institute of Nanoscience, Delft University of
Technology
Valley splitting and spin shuttling in Si/SiGe heterostructures
Merritt Losert1
1University of Wisconsin-Madison
Bucket brigade and conveyor-mode coherent electron spin shuttling in Si/SiGe quantum dots
Maxim De Smet1
1QuTech, TU Delft
Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
Lars R Schreiber,21
1JARA-FIT IQI, RWTH Aachen and FZ Jülich, 2ARQUE Systems
GmbH
Session 6: Large scale characterization
Tunnel Falls: Intel’s Latest Silicon Spin Qubit Test Chip
Hubert George1
1Intel
Rapid cryogenic characterisation of 1024 integrated silicon quantum dots
Virginia Natalia Ciriano-Tejel1
1Quantum Motion
Si spin Qubit fabrication in advanced 300 mm semiconductor manufacturing facilities: the good, the bad, and the ugly
Kristiaan De Greve1,2
1IMEC, 2KU Leuven
Wafer-level characterization of industrial grade Si-based qubit devices
Emmanuel Chanrion1
1CEA-LETI
QARPET: A quantum prober of spin-qubit performance at scale
Alberto Tosato1
1QuTech
Session 7: New directions
Optomechanical readout for donor spins in silicon via strain coupling
Arvind Shankar Kumar1
1University of Jyväskylä
Entanglement by measurement of spin qubits via longitudinal couplings to a superconducting resonator
Rusko Ruskov (Hristov)1
1Laboratory for Physical Sciences
Qubits on the move: fast, high-fidelity, baseband quantum gates
Chien-An Wang1
1Qutech and Kavli Institute of Nanoscience
Dynamic-ADAPT-QAOA and Layered-ADAPT-VQE: Two algorithms for demonstration in silicon
Normann Mertig1
1Hitachi Cambridge Laboratory, Hitachi Europe Ltd.
Session 8: Device structure
Progress toward developing a Sn-Qubit Platform
Dwight Luhman1
1Sandia National Laboratories
Coupling of a resonator exchange qubit on a Si/SiGe triple quantum dot and a high impedance resonator
Shunli Jiang1
1University of Science and Technology of China
Ab-initio study of valley-orbit states in Si/SiGe and Si/SiO2
Lukas Cvitkovich1,2
1Institute of Microelectronics, Vienna Univ. of Technology, Gusshausstrasse
27-29, 1040 Wien, 2Univ. Grenoble Alpes, CEA, IRIG-MEM-L Sim, 17 Av. des
Martyrs, F-38000 Grenoble, France
Theory of spin qubits in silicon Fin field-effect transistors: Prospects for holes and electrons
Stefano Bosco1
1Univ. of Basel
Session 9: Spin-photon coupling
Two-qubit logic between distant spins in silicon
Xiao Xue1
1QuTech, Delft University of Technology
Long electron spin and optical coherence of Er in Si
Alexey Lyasota1
1Centre of Excellence for Quantum Computation and Communication Technology,
School of Physics, University of New South Wales, Sydney, NSW 2052, Australia
Silicon T centre hyperfine structure and memory-qubit protection scheme
Nicholas Alan Brunelle1,2
1Simon Fraser University, Canada, 2Photonic Inc., Canada
A silicon hole spin flopping-mode qubit in a cQED architecture
Simon Zihlmann1
1Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble,
France
A photonic which-path entangler based on longitudinal cavity-qubit coupling
Zoé McIntyre1
1McGill University
Presentation instructions
Oral presentations: 15-minute talk + 5-minute question.
Poster presentations: A0 size or smaller.
There will be no invited speakers.